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6 June 2001 Carrier confinement in strain-compensated InGaAs/GaAsP quantum well laser with temperature-insensitive threshold
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429799
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Temperature insensitive threshold current in strain- compensated-(InxGa1-xAs/GaAsP) SQW-lasers with x X 0.3 is investigated by changing x equals 0.2, 0.25 and 0.3 by the spectral measurement and the threshold carrier density determined by lasing delay. Large energy separation between the heavy and the light hole subbands due to the highly compressive strain makes it not to exist the light hole subbands in the quantum well, which is confirmed by the induced Raman scattering spectral above threshold. Injected holds are almost contained in the heavy hole subbands, and injected electrons are also contained in the electron subbands at threshold in these lasers at room temperature.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wataru Susaki, Hiroyuki Yaku, Toshiro Hayakawa, Toshiaki Fukunaga, and Hideki Asano "Carrier confinement in strain-compensated InGaAs/GaAsP quantum well laser with temperature-insensitive threshold", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429799
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