6 June 2001 Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429784
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Threshold reduction and enhanced mode selectivity are demonstrated in pulsed GaN-based lasers upon the introduction of 5(lambda) /4 air/nitride Bragg gratings defined by focused ion beam (FIB) etching. A 13% reduction in threshold current is obtained from a laser with a 5 micrometers wide ridge by introducing a deep-etch air/nitride mirror. The presence of a reduced-depth Bragg grating, etched across 4 micrometers wide ridge structure using a lower FIB dose, results in single-peak spectral characteristics for currents up to 1.14(DOT)ITh. The introduction of the Bragg mirrors always results in a broadening of the near field parallel to the epitaxial planes.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Claudio Marinelli, Laurence J. Sargent, Michal Bordovsky, Adrian Wonfor, Judy M. Rorison, Richard V. Penty, Ian H. White, Peter J. Heard, Ghulam Hasnain, and Richard P. Schneider "Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429784; https://doi.org/10.1117/12.429784
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