6 June 2001 GaInNAs-based long-wavelength lasers grown by MOCVD
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429797
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
GaInNAs is a novel III-V semiconductor material and is a very attractive material for long-wavelength-range lasers. Highly strained 1.3 micrometers range GaInNAs/GaAs double quantum- well lasers grown by metalorganic chemical vapor deposition are demonstrated. A high characteristic temperature of 205 K (22 - 80 degree(s)C) was obtained with a low threshold current density of 0.92 kA/cm2 (22 degree(s)C) in a broad stripe laser. The highest lasing operation temperature of 170 degree(s)C, and continuous-wave operation with a low threshold current of 27 mA were also obtained in a 7.5- micrometers -wide ridge-stripe laser. The GaInNAs/GaAs material system is very promising for next-generation long-wavelength lasers without any cooling device because they have stable characteristics at ambient temperature.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shunichi Sato, "GaInNAs-based long-wavelength lasers grown by MOCVD", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429797; https://doi.org/10.1117/12.429797
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