GaN-based violet laser diodes

Shinichi Nagahama; Naruhito Iwasa; Masayuki Senoh; Toshio Matsushita; Yasunobu Sugimoto; Hiroyuki Kiyoku; Tokuya Kozaki; Masahiko Sano; Hiroaki Matsumura; Hitoshi Umemoto; Kazuyuki Chocho; Takashi Mukai

doi:10.1117/12.429804

6 June 2001 GaN-based violet laser diodes

Shinichi Nagahama, Naruhito Iwasa, Masayuki Senoh, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki, Masahiko Sano, Hiroaki Matsumura, Hitoshi Umemoto, Kazuyuki Chocho, Takashi Mukai

Author Affiliations +

Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429804
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Three kinds of substrates were used for violet InGaN multi- quantum-well/GaN/AlGaN separate-confinement-heterostructure laser diodes (LDs). One of substrates is epitaxially laterally overgrown GaN (ELOG) substrate. Another is `free- standing GaN' substrate. In order to obtain it, thick GaN was grown on `ELOG', and then, sapphire and `ELOG' were removed. Third one is `ELOG grown on thick GaN' substrate. The threading dislocation densities of `ELOG', `free- standing GaN' and `ELOG grown on thick GaN' were 1 X 10⁶/cm², 5 X 10⁷/cm² and 7 X 10⁵/cm², respectively. LDs were fabricated with the structure of epi side up. The estimated lifetime of LD grown on `ELOG grown on thick GaN' was 15000 h under condition of continuous-wave operation, case temperature of 60 degree(s)C and output power of 30 mW.

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Shinichi Nagahama, Naruhito Iwasa, Masayuki Senoh, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki, Masahiko Sano, Hiroaki Matsumura, Hitoshi Umemoto, Kazuyuki Chocho, and Takashi Mukai "GaN-based violet laser diodes", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429804

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