6 June 2001 High-power long-wavelength lasers using GaAs-based quantum dots
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429786
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Continuous wave room-temperature output power of approximately 3 W for edge-emitters and of about 1 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 micrometers . Long operation lifetimes are manifested. The breakthrough became possible due to development of self- organized growth and defect-reduction techniques in QD technology. We show that the basic parameters of QD lasers outperform the parameters of the devices fabricated using competing GaAs-based `quantum well' technologies.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai N. Ledentsov, Nikolai N. Ledentsov, Victor M. Ustinov, Victor M. Ustinov, Vitaly A. Shchukin, Vitaly A. Shchukin, Dieter Bimberg, Dieter Bimberg, James A. Lott, James A. Lott, Zhores I. Alferov, Zhores I. Alferov, } "High-power long-wavelength lasers using GaAs-based quantum dots", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429786; https://doi.org/10.1117/12.429786


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