6 June 2001 High-power long-wavelength lasers using GaAs-based quantum dots
Author Affiliations +
Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429786
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Continuous wave room-temperature output power of approximately 3 W for edge-emitters and of about 1 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 micrometers . Long operation lifetimes are manifested. The breakthrough became possible due to development of self- organized growth and defect-reduction techniques in QD technology. We show that the basic parameters of QD lasers outperform the parameters of the devices fabricated using competing GaAs-based `quantum well' technologies.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai N. Ledentsov, Nikolai N. Ledentsov, Victor M. Ustinov, Victor M. Ustinov, Vitaly A. Shchukin, Vitaly A. Shchukin, Dieter Bimberg, Dieter Bimberg, James A. Lott, James A. Lott, Zhores I. Alferov, Zhores I. Alferov, } "High-power long-wavelength lasers using GaAs-based quantum dots", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429786; https://doi.org/10.1117/12.429786
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

20 Gb s direct modulation of 980 nm VCSELs based...
Proceedings of SPIE (July 05 2006)
QD lasers: physics and applications
Proceedings of SPIE (January 30 2005)
All epitaxial VCSELs with tunnel QW QD InGaAs InAs gain...
Proceedings of SPIE (February 05 2007)
1.3 1.5 µm quantum dot lasers on foreign substrates ...
Proceedings of SPIE (February 21 2006)

Back to Top