6 June 2001 MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429798
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
InxGa1-xAs1-yNy quaternary alloys offer the promise of longer wavelength, >= 1.3 micrometers optical transceivers grown on GaAs substrates. To achieve acceptable radiative efficiencies at 1.3 micrometers , highly- strained InGaAsN quantum wells (x approximately equals 0.4, y approximately equals 0.005) are being developed as laser active regions. By introducing GaAsP layers into the active region for strain-compensation, gain can be increased using multiple InGaAsN quantum wells. In this work, we report the first strain-compensated, 1.3 micrometers InGaAsN MQW lasers. Our devices were grown by metal- organic chemical vapor deposition. Lasers with InGaAsN quantum well active regions are proving superior to lasers constructed with competing active region materials. Under pulsed operation, our 1.3 micrometers InGaAsN lasers displayed negligible blue-shift from the low-injection LED emission, and state-of-the-art characteristic temperature (159 K) was obtained for a 1.3 micrometers laser.
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Steven R. Kurtz, Robert M. Sieg, Andrew A. Allerman, Kent D. Choquette, Ryan L. Naone, "MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429798; https://doi.org/10.1117/12.429798
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