Mid-IR interband cascade lasers: progress toward high performance

John D. Bruno; Rui Q. Yang; John L. Bradshaw; John T. Pham; Donald E. Wortman

doi:10.1117/12.429783

6 June 2001 Mid-IR interband cascade lasers: progress toward high performance

John D. Bruno, Rui Q. Yang, John L. Bradshaw, John T. Pham, Donald E. Wortman

Author Affiliations +

Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429783
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Type-II interband cascade (IC) lasers take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we review our recent progress in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6 - 4 micrometers . These semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., approximately 56 A/cm² at 80 K) and power efficiency exceeding 14% were observed from mesa-stripe lasers when operated in cw mode. Also, these lasers were able to operate at temperatures up to approximately 252 K in pulsed mode and approximately 142 K in cw mode. We observed slope efficiencies exceeding 1 W/A/facet, corresponding to a differential external quantum efficiency exceeding 600%, from devices at temperatures above 80 K. A peak output power of approximately 6 W/facet was observed from an IC laser at 80 K.

Citation Download Citation

John D. Bruno, Rui Q. Yang, John L. Bradshaw, John T. Pham, and Donald E. Wortman "Mid-IR interband cascade lasers: progress toward high performance", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429783

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