Paper
6 June 2001 Performance of 3-W/100-μm stripe diode laser at 950 and 810 nm
Goetz Erbert, Gerhard Beister, Frank Bugge, Arne Knauer, Ralf Huelsewede, Wolfgang Pittroff, Juergen Sebastian, Hans Wenzel, Marcus Weyers, Guenther Traenkle
Author Affiliations +
Abstract
In this paper we report on Al-free InGaAs/InGaAsP/InGaP broad area laser diodes emitting at 950 nm and on 810 nm- laser diodes with Al-free GaAsP quantum wells in AlGaAs waveguides. 2 mm long diode lasers show a high wall plug efficiency above 50% at output powers of about 3 W. The beam characteristics of these diode lasers benefit from small confinement factors. Results depending on stripe width and resonator length are given.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Goetz Erbert, Gerhard Beister, Frank Bugge, Arne Knauer, Ralf Huelsewede, Wolfgang Pittroff, Juergen Sebastian, Hans Wenzel, Marcus Weyers, and Guenther Traenkle "Performance of 3-W/100-μm stripe diode laser at 950 and 810 nm", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429788
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Semiconductor lasers

Waveguides

Quantum wells

Aluminum

Cladding

Resonators

Lab on a chip

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