6 June 2001 Performance of 3-W/100-μm stripe diode laser at 950 and 810 nm
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429788
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
In this paper we report on Al-free InGaAs/InGaAsP/InGaP broad area laser diodes emitting at 950 nm and on 810 nm- laser diodes with Al-free GaAsP quantum wells in AlGaAs waveguides. 2 mm long diode lasers show a high wall plug efficiency above 50% at output powers of about 3 W. The beam characteristics of these diode lasers benefit from small confinement factors. Results depending on stripe width and resonator length are given.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Goetz Erbert, Goetz Erbert, Gerhard Beister, Gerhard Beister, Frank Bugge, Frank Bugge, Arne Knauer, Arne Knauer, Ralf Huelsewede, Ralf Huelsewede, Wolfgang Pittroff, Wolfgang Pittroff, Juergen Sebastian, Juergen Sebastian, Hans Wenzel, Hans Wenzel, Marcus Weyers, Marcus Weyers, Guenther Traenkle, Guenther Traenkle, } "Performance of 3-W/100-μm stripe diode laser at 950 and 810 nm", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429788; https://doi.org/10.1117/12.429788
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