6 June 2001 Requirements for uncooled direct laser modulation at 10 Gb/s
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Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429792
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Requirements for directly modulated semiconductor lasers are investigated in terms of directly measurable laser and link parameters. Data rates comparable to the bandwidth imposed by the active layer design are considered, and performance is assessed in terms of laser resonance frequency and damping. Link critical variables such as contrast ratio, fall time and error rate are thereby related directly to parameters extracted from static measurements. To allow error free operation, a resonance frequency equal to the data rate is acceptable, but to ensure a fast fall time, resonance frequencies exceeding one and a half times the data rate are necessary.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin A. Williams, Richard V. Penty, Ian H. White, and Mark Silver "Requirements for uncooled direct laser modulation at 10 Gb/s", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); doi: 10.1117/12.429792; https://doi.org/10.1117/12.429792
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