12 June 2001 AlGaN Schottky diodes for short-wavelength UV applications
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429410
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
High performance ultraviolet (UV) detectors have been fabricated using plasma-enhanced molecular beam epitaxy. The realized AlGaN Schottky detectors exhibit high responsivity, sharp spectral cutoff and high shunt resistance of several giga-ohms for 0.5 mm2 active area devices. Quantitative measurements have been carried out on these detectors in the photon energy range from < 1 to > 10 eV (from approximately 1200 to 120 nm in wavelength). Very short UV spectral measurement of these AlGaN detectors is reported for the first time using high intensity sources. The detectors exhibited almost eight orders of magnitude in response dynamic range in that spectral span. Reliability of the devices is evaluated after exposure to repeated DUV irradiation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter P. Chow, Jody J. Klaassen, Robert E. Vest, James M. Van Hove, Andrew M. Wowchak, Christina Polley, "AlGaN Schottky diodes for short-wavelength UV applications", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429410; https://doi.org/10.1117/12.429410
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