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12 June 2001 AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001)
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
There has been a growing interest for the development of solar blind ultraviolet (UV) photodetectors for use in a variety of applications, including early missile threat warning, flame monitoring, UV radiation monitoring and chemical/biological reagent detection. The AlxGa1-xN material system has emerged as the most promising approach for such devices. However, the control of the material quality and the device technology are still rather immature. We report here the metalorganic chemical vapor deposition, the n-type and the p-type doping of high quality AlxGa1-xN thin films on sapphire substrates over a wide range of Al concentration. The quality of this AlxGa1-xN material was verified through the demonstration of high performance visible and solar blind ultraviolet p-i-n photodiodes with a cut-off wavelength continuously tunable from 227 to 365 nm, internal quantum efficiencies up to 86% when operated in photovoltaic mode, and a ultraviolet-to-visible rejection ratio as high as six orders of magnitude. Both front and back side illuminated p-i-n photodiodes were realized. Photodetector devices were also demonstrated on GaN material obtained using lateral epitaxial overgrowth. The technology for such AlxGa1-xN based devices was improved in an effort to enhance their performance, including the development of ohmic metal contacts to both n-type and p-type AlxGa1-xN films with an Al concentration up to 40%.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan McClintock, Peter M. Sandvik, Kan Mi, Fatemeh Shahedipour, Alireza Yasan, Christopher Louis Jelen, Patrick Kung, and Manijeh Razeghi "AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001);

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