12 June 2001 Bragg reflector for GaAs solar cells on Ge substrate
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429430
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
For the first time, we reported that Bragg reflector with less than 10 periods designed for near band gap wavelength can reflect IR photons with energy less than 1.42 eV and reduce the solar absorptance of a GaAs/Ge solar cell from 0.889 to 0.809. This reduction would lower down the working temperature of a solar panel on space orbit by 8 degree(s)C. With the consideration that this Bragg super lattice structure can obviously improve the morphology of the hetero-epitaxy grown GaAs on Ge and a thick buffer layer are not needed any more for a good device, the design will not increase the epitaxy cost and can be used in large scale production.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenjun Chen, Wenjun Chen, Zaixiang Qiao, Zaixiang Qiao, Qiang Sun, Qiang Sun, Fusheng Du, Fusheng Du, Zhibin Xiao, Zhibin Xiao, Jun Xu, Jun Xu, } "Bragg reflector for GaAs solar cells on Ge substrate", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429430; https://doi.org/10.1117/12.429430

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