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12 June 2001 Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429436
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We present a discussion of a new edge breakdown suppression scheme for use in planar avalanche photodiodes called the joint opening effect avalanche photodiode, JOE-APD. The JOE-APD utilizes a single growth process that achieves center breakdown dominance without the use of guard rings, partial charge sheets or surface etches. Edge breakdown suppression is achieved within the JOE-APD by partially insulating the electric field growth in the active region from the geometry of the primary well. This design methodology allows for the fabrication of a thin multiplication region, which is necessary, for APDs used in Gb/s applications. In addition the electric fields at the surface of the joint opening effect APD are reduced. An advanced drift-diffusion simulation is used to demonstrate the workings of the JOE-APD.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joe N. Haralson II and Kevin F. Brennan "Edge breakdown suppression in planar avalanche photodiodes: the joint opening effect avalanche photodiode", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429436
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