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12 June 2001 Heterojunction interfacial workfunction detectors for far-infrared applications
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429422
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Results are presented for a novel HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) far-infrared detector with a cutoff wavelength of 70 micrometers . A responsivity of 10.5 A/W and a D* of approximately 1013 cm(root)Hz/W at 20 micrometers was achieved at 4.2 K. Dark current for the detectors was 2 orders of magnitude better than for homojunction interfacial workfunction internal photoemission (HIWIP) detectors at liquid helium temperatures. Capacitance measurements show similar behavior to other infrared photodetectors such as HIWIPs and QWIPs. The overall superior characteristics of HEIWIP detectors over HIWIP and QWIP detectors at longer wavelengths are of interest for future developments in far-infrared applications.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. G. Unil Perera, S. G. Matsik, Viatcheslav Yu Letov, Hui Chun Liu, Aidong Shen, Ming Gao, Zbigniew R. Wasilewski, Margaret Buchanan, and S. J. Rolfe "Heterojunction interfacial workfunction detectors for far-infrared applications", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429422
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