12 June 2001 HgCdTe buried multiple photodiodes fabricated by the liquid phase epitaxy
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001); doi: 10.1117/12.429428
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
This article reports the advancement of Hg1-xCdxTe epitaxial growth on CdZnTe(111)B substrates. Prior to growth of HgCdTe layers the substrate has been etched to form the bars on 30 micrometers centers and 20-micrometers depth. Next, 20-micrometers thick HgCdTe epitaxial layer has been grown by liquid phase epitaxy from Te-rich solution. The Nomarski microscopy showed that the surface of specially prepared layers were flat and the composition of layers, measured by FTIR microscopy, was homogeneous. Samples were cleaved and examined in cross section by SEM.
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Waldemar Gawron, Krzysztof Adamiec, Antoni Rogalski, "HgCdTe buried multiple photodiodes fabricated by the liquid phase epitaxy", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429428; https://doi.org/10.1117/12.429428

Liquid phase epitaxy

Mercury cadmium telluride


Scanning electron microscopy


Photoresist materials

FT-IR spectroscopy

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