12 June 2001 InP/InGaAs-based hi-lo avalanche photodetectors for high-speed optical communications
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001); doi: 10.1117/12.429423
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We present an overview on the progress of InP/InGaAs based Hi-Lo APD's, which are important for long-haul optical fiber communications. Much of recent research efforts have been focused on improving the operation reliability, the gain- bandwidth (GB) product, and reducing the excess noise factor. To achieve a high GB product and a reliable operation, the reduction of the thickness of the multiplication layer and an optimum design of the internal electric field distribution are essential. The concept of the planar InP/InGaAs APD is very important from this perspective and the Hi-Lo APD's are expected to play an important role.
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Chan-Yong Park, Seung-Goo Kang, Ilgu Yun, Kyung-Sook Hyun, Heung-Ro Choo, El-Hang Lee, "InP/InGaAs-based hi-lo avalanche photodetectors for high-speed optical communications", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429423; https://doi.org/10.1117/12.429423
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KEYWORDS
Avalanche photodetectors

Indium gallium arsenide

Ionization

Absorption

Radon

Optical communications

Diffusion

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