12 June 2001 Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429405
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
The design and characteristics of very long wavelength InAs/InGaSb strained layer superlattice photodiodes are presented. These photodiodes have cutoff wavelengths ranging from 12 to longer than 15 microns, and are among the longest wavelengths reported for photovoltaic detectors made using this material system. Structural, optical and electrical properties are reported. Measured quantum efficiencies are as high as 10% at 10 micron for a 0.7 micron thick structure at 77K. The absorption coefficients are excellent, however, the electrical properties still need improvement.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Alex Anselm, K. Alex Anselm, Hongwen Ren, Hongwen Ren, Mauro Vilela, Mauro Vilela, Jun Zheng, Jun Zheng, C.H. Thompson Lin, C.H. Thompson Lin, Vaidya Nathan, Vaidya Nathan, Gail J. Brown, Gail J. Brown, } "Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429405; https://doi.org/10.1117/12.429405

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