12 June 2001 Novel macroporous silicon structures as light emission and sensor elements
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429400
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The light-assisted method of electrochemical etching of n-Si allows the formation of cylindrical macropores with a high ratio of pore depth to pore diameter and with strong periodicity. Such structures are highly promising for modification of the electromagnetic wave spectra in semiconductor devices. In this work, the method of macropore formation on low resistance silicon plates was improved. Photoluminescence (PL), peaking near 600 nm with an intensity of 10 (mu) W/cm2, was measured on macroporous silicon, which had evolved microporous layers containing nanocrystals. For higher current densities during pore formation the intensity of the orange light emission decreased, and a blue PL shift was observed due to a reduction in the sizes of the Si nanoparticles. Anomalous coefficients of light absorption allow the development of thermal- and photo-sensors on the basis of macroporous silicon. The investigated macroporous silicon structures are a promising material for multi-element thermal sensor fabrication due to a high temperature coefficient of electrical resistance (1 - 4%), low noise level (2 (DOT) 10-9 VHz-1/2) and good radiation absorption in the spectral region (lambda) equals 2 - 20 micrometers .
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Lyudmila A. Karachevtseva, Lyudmila A. Karachevtseva, } "Novel macroporous silicon structures as light emission and sensor elements", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429400; https://doi.org/10.1117/12.429400
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