12 June 2001 Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429404
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
The optoelectronic properties of short-period InAs/(GaIn)Sb superlattices (SLs) grown by molecular beam epitaxy on GaSb substrates are discussed. We report on the optimization of the SL materials properties with special emphasis on the use for infrared detection devices. The materials quality is evaluated by using high resolution x-ray diffraction, atomic force microscopy, and photoluminescence spectroscopy. In- plane magneto-transport investigations were performed applying mobility spectrum analysis. The SL diodes were analyzed performing standard electro-optical measurements. The observation of resonances in the I-V curves in the regime of Zener-tunneling due to Wannier-Stark localization opens a new tool for the electrical investigation of photodiodes with low band gap energy. The status of the processing technology is reported demonstrating the feasibility for the fabrication of 256 X 256 focal plane arrays operating in the 8-to-12 micrometers atmospheric window. In addition, results are given for mid-infrared SL-diodes, grown with lattice matched AlGaAsSb barriers instead in the binary InAs/GaSb SL system.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Fuchs, Frank Fuchs, L. Buerkle, L. Buerkle, R. Hamid, R. Hamid, N. Herres, N. Herres, Wilfried Pletschen, Wilfried Pletschen, R. E. Sah, R. E. Sah, Rudolf Kiefer, Rudolf Kiefer, J. Schmitz, J. Schmitz, } "Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429404; https://doi.org/10.1117/12.429404

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