12 June 2001 Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes
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Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001); doi: 10.1117/12.429419
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
In the paper the performance of P-on-n double-layer heterojunction HgCdTe photodiodes are temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and R0A product is analyzed. The effect of lateral collection of diffusion current and photocurrent on photodiode parameters is also shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p- side doping concentration on photodiode parameters is described briefly.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jakub Wenus, Jaroslaw Rutkowski, Antoni Rogalski, "Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429419; https://doi.org/10.1117/12.429419
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KEYWORDS
Photodiodes

Heterojunctions

Mercury cadmium telluride

Quantum efficiency

Diffusion

Doping

Liquid phase epitaxy

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