12 June 2001 Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes
Author Affiliations +
Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429419
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
In the paper the performance of P-on-n double-layer heterojunction HgCdTe photodiodes are temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and R0A product is analyzed. The effect of lateral collection of diffusion current and photocurrent on photodiode parameters is also shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p- side doping concentration on photodiode parameters is described briefly.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jakub Wenus, Jaroslaw Rutkowski, and Antoni Rogalski "Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429419; https://doi.org/10.1117/12.429419
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Low dark current p on n MCT detector in long...
Proceedings of SPIE (June 10 2015)
Analysis of VLWIR HgCdTe photodiode performance
Proceedings of SPIE (October 21 2003)
From LWIR to VLWIR FPAs made with HgCdTe at Defir
Proceedings of SPIE (October 02 2006)
HgCdTe double-layer heterojunction detector device
Proceedings of SPIE (July 16 2000)
VLIWR HgCdTe staring focal plane array development
Proceedings of SPIE (September 11 2007)

Back to Top