Enhanced performance of Si opto-devices by SiGe nanostructures

Hartmut Presting; Johannes Konle; Horst Kibbel; Klaus Thonke; Rolf Sauer

doi:10.1117/12.426921

18 May 2001 Enhanced performance of Si opto-devices by SiGe nanostructures

Hartmut Presting, Johannes Konle, Horst Kibbel, Klaus Thonke, Rolf Sauer

Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426921
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Ultrathin silicon/germanium (SiGe) quantum well (QW) and short-period Si_mGe_n superlattice structures have been grown by molecular beam epitaxy (MBE) on <100$GTR Si substrates. Si/SiGe detectors in the near infrared (IR; 1.3(mu) ) for optical communication and mid-infrared (3(mu) -5(mu) ; 8(mu) -12(mu) ) regime for heat sensing applications have been fabricated and characterized. The SiGe detectors for the mid IR are based on hetero-internal photoemission (HIP) from a highly p-doped SiGe quantum well into an undoped Si layer. These SiGe HIP-heterostructures allow the possibility to tailor the photoresponse and cut-off wavelength for IR-detectors by changing the Ge-content and QW width of the active layers. External quantum efficiencies up to 0.6% at 77K have been achieved from HIP-detectors and detectivities in excess of 8x10¹¹cmHz^0.5/W at 77 Kelvin have been obtained for Si/SiGe multiple quantum well (MQW) detectors. We have also studied nano-scaled, three dimensional Ge islands grown by self-organized Stranski-Krastanov growth. The Ge-islands are deposited in the base of a Si solar cell to increase the quantum efficiency and are investigated by atomic force microscopy (AFM), photoluminescence and photocurrent measurements. They have been grown with varying conditions and exhibit three dimensional growth in a small temperature regime between 500 degree(s)C and 700 degree(s)C for Ge-thicknesses above 4ML.

Citation Download Citation

Hartmut Presting, Johannes Konle, Horst Kibbel, Klaus Thonke, and Rolf Sauer "Enhanced performance of Si opto-devices by SiGe nanostructures", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426921

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