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18 May 2001 Highly efficient Ge detector integrated with waveguide based on SOI technology
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Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426928
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
This paper reports the growth, fabrication and characterization of integrated Ge detectors with rib waveguides based on SOI technology. The MBE Ge diode structures were first grown on different graded buffers on SOI wafers. These structures were then fabricated into individual and integrated diodes with various kinds of rib waveguides. Analysis of the performance of the integrated detectors indicates that Ge detectors with quantum efficiency over 70% can be achieved at 1.55um. Major obstacle for practical applications of these Ge detectors will be discussed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yin-Sheng Tang, H. C. Shi, James K. Chan, Jian-Lin Liu, Da Teng, and Kang Lung Wang "Highly efficient Ge detector integrated with waveguide based on SOI technology", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426928
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