18 May 2001 Peculiarities of heterostructures made on the base of porous silicon and their physical properties
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Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426936
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Photoemissive heterostructures solid films of polymer PMA, Al2O3, ZnS on porous silicon surfaces were investigated. Photosensitive and tenzosensitive heterostructures on the base of porous silicon were created by method of optical contact of GaSe plates and heterostructures porous silicon silicon substrate. Photoemission, photosensitive and tenzosensitive properties of heterostructures based on porous silicon were investigated.
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Liubomyr S. Monastyrskii, Roman M. Kovtun, Petro P. Parandiy, Sergii O. Kostukevich, "Peculiarities of heterostructures made on the base of porous silicon and their physical properties", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426936; https://doi.org/10.1117/12.426936
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