18 May 2001 (SiGe/Si)n/Si quantum wells for enhanced spontaneous emission LEDs
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Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426923
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We analyse theoretically the feasibility of a vertical (SiGe/Si)n/Si quantum well structures for enhanced spontaneous emission light emitting diodes. The structure can be grown by selective epitaxy on silicon-on-insulator substrate. A design of a LED emitting at 1.3 micrometers wavelength is carried out.
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Souren P. Pogossian, Adrian P. Vonsovici, Lili Vescan, "(SiGe/Si)n/Si quantum wells for enhanced spontaneous emission LEDs", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426923; https://doi.org/10.1117/12.426923
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