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18 May 2001 Strong yellow electroluminescence from manganese-silicon-implanted silicon-dioxide layers
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Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426935
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Room temperature (RT) electroluminescence (EL) was obtained for the first time from Mn enriched Si/SiO2 structure. Si+ or Ar+ stimulated knock-on implantation through 20 nm Mn film with the subsequent annealing was used for EL device fabrication. Devices exhibit bright emission band at the 2.06 eV. The position does neither depend on implanted ion dose nor annealing procedure. EL is visible by naked eye even at current density as low as 1.5x10-6 Acm-2. Continuous wave external quantum efficiency 1.1x10-3 and power efficiency 1.5x10-5 have been achieved.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Novikov, Victor F. Ovchinnikov, Jaakko Haerkoenen, and Juha A.T. Sinkkonen "Strong yellow electroluminescence from manganese-silicon-implanted silicon-dioxide layers", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426935
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