18 May 2001 Waveguides and modulators in 3C-SiC
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Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426920
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We have designed and fabricated waveguide optical modulators using cubic silicon carbide-(3C-SiC)-on-insulator rib waveguides. A refractive index change is induced in the rib via the plasma dispersion effect. These types of devices have potential for relatively high-speed silicon-based photonics compatible with silicon processing technology, as compared to pure silicon. Furthermore, the wide bandgap (2.2 eV) of 3C-SiC makes the devices suitable for use over the visible and near infrared spectrum range as well as the longer communication wavelengths. We have demonstrated waveguiding in 3C-SiC, fabricating the waveguides by ion implantation of oxygen into a silicon carbide layer. We have also established a processing recipe for the SiC wafers which enables fabrication of 3- dimensional devices. The work reported here describes the fabrication of the devices and presents preliminary experimental results for the waveguide losses and the modulation of the refractive index as a function of applied current. An efficient waveguide modulator for a single polarization is reported.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adrian K. Kewell, Adrian K. Kewell, Adrian P. Vonsovici, Adrian P. Vonsovici, Graham T. Reed, Graham T. Reed, Alan G. R. Evans, Alan G. R. Evans, "Waveguides and modulators in 3C-SiC", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426920; https://doi.org/10.1117/12.426920
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