Advanced excimer laser crystallization techniques of Si thin film for location control of large grain on glass

Ryoichi Ishihara; Paul Ch. van der Wilt; Barry D. van Dijk; Artyom Burtsev; F. C. Voogt; G. J. Bertens; J. W. Metselaar; C. I. M. Beenakker

doi:10.1117/12.424856

30 April 2001 Advanced excimer laser crystallization techniques of Si thin film for location control of large grain on glass

Ryoichi Ishihara, Paul Ch. van der Wilt, Barry D. van Dijk, Artyom Burtsev, F. C. Voogt, G. J. Bertens, J. W. Metselaar, C. I. M. Beenakker

Author Affiliations +

Proceedings Volume 4295, Flat Panel Display Technology and Display Metrology II; (2001) https://doi.org/10.1117/12.424856
Event: Photonics West 2001 - Electronic Imaging, 2001, San Jose, CA, United States

Abstract

This paper reviews advanced excimer-laser crystallization techniques and its application to crystal-Si thin film transistors (TFTs). Combined microstructure and time- resolved optical reflectivity investigations during conventional excimer-laser crystallization showed that explosive crystallization occurs during excimer-laser irradiation. Two methods enabling location-control of large silicon islands will be reviewed. One of the methods uses local thermal relief by modifying locally the heat extraction rate towards the substrate. A small unmolten region remains at the center of high heat extraction part which then acts as a seed for radially grown Si grain with a diameter of 6 micrometers . One of the other methods use geometric selection through a vertical narrow constriction. In this method, upon laser irradiation, a small unmolten Si region remains at the bottom of narrow holes etched in the underlying isolation layer. During vertical regrowth, a single grain is filtered out which subsequently seeds the lateral growth of large grains. We will also discuss the performance of crystal-silicon TFTs that are formed in the location-controlled Si grains. The field-effect mobility for electrons is 450 cm²Vs, which is very close to that of TFTs made with silicon-on-insulator wafers.

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Ryoichi Ishihara, Paul Ch. van der Wilt, Barry D. van Dijk, Artyom Burtsev, F. C. Voogt, G. J. Bertens, J. W. Metselaar, and C. I. M. Beenakker "Advanced excimer laser crystallization techniques of Si thin film for location control of large grain on glass", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); https://doi.org/10.1117/12.424856

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