30 April 2001 Poly-Si driving circuits for organic EL displays
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Abstract
In order to realize a fully integrated polycrystalline silicon thin-film transistor organic electro-luminescent display (poly-Si TFT-OELD) with good image quality, problems caused by spatially non-uniform device characteristic in TFTs must be addressed. In TFT-OELDs, spatial variation of threshold voltage in TFT driving circuits leads to non- uniform brightness and poor grayscale accuracy. Consequently, special pixel driver circuits are designed to overcome such difficulties. TFT-OELD analog and digital pixel driver circuits are closely examined and design difficulties are pointed out. For example, in an analog driver circuit, one difficulty is to minimize the power consumption given the spread of (Delta) V(Tau ); whereas in a digital driver circuit, one of the difficulties is how to maximize the number of grayscales. Performance of important circuits are analyzed and compared through circuit simulations using a poly-Si TFT model. Finally, suggestions of grayscale accuracy improvement are made.
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Simon W.-B. Tam, Yojiro Matsueda, Mutsumi Kimura, Hiroshi Maeda, Tatsuya Shimoda, Piero Migliorato, "Poly-Si driving circuits for organic EL displays", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424867; https://doi.org/10.1117/12.424867
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KEYWORDS
Electroluminescence

Analog electronics

Transistors

Digital electronics

Computer programming

Chemical elements

Digital electronic circuits

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