30 April 2001 Polycrystalline silicon thin film transistor technology for flexible large-area electronics
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The burgeoning number of mobile consumer electronics has created a demand for lightweight, low-cost, portable displays. The development of a polycrystalline-silicon thin film transistor (TFT) technology compatible with plastic substrates will enable displays and large-area electronics that are low power, rugged and flexible. Significant challenges exist in the development of a polysilicon TFT fabrication process that is compatible with plastic substrates, since plastic has a much lower thermal budget than glass substrates. In general, superior polysilicon TFT performance is achieved with higher temperature fabrication processes because the quality of the polysilicon and gate- dielectric films are very sensitive to process temperature. In this work, an ultra-low-temperature process for fabricating high-quality self-aligned polysilicon TFTs on flexible plastic substrates is described. All fabrication steps are performed at or below 100 degrees C. Polysilicon is formed by crystallizing sputtered amorphous Si films using a XeCl excimer laser with a pulse duration of approximately 35 ns. Gate oxide deposition is formed using high-density plasma CVD, and metal films are deposited by sputtering.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
YehJiun Tung, YehJiun Tung, Paul G. Carey, Paul G. Carey, Patrick M. Smith, Patrick M. Smith, Steven D. Theiss, Steven D. Theiss, Paul Wickboldt, Paul Wickboldt, Xiaofan Meng, Xiaofan Meng, Robert E. Weiss, Robert E. Weiss, Gary A. Davis, Gary A. Davis, Verle W. Aebi, Verle W. Aebi, Tsu-Jae King, Tsu-Jae King, } "Polycrystalline silicon thin film transistor technology for flexible large-area electronics", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424862; https://doi.org/10.1117/12.424862

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