30 April 2001 Simulation of transient temperature profiles during ELA and relation to process parameters
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Abstract
We have developed excimer-laser-annealing modeling capability by broadening the computational ability of a standard finite-element based computational-fluid-dynamics software package to adopt to the specific demands of very rapid heating of thin a-Si films. This was achieved by the incorporation of a subroutine employing a phase function and a set of rules for determining latent heat absorption or release. Wit this enhancement the model was able to correctly calculate the degree of superheating/undercooling in the film and track the melt-solid interface velocity. The model also provided reasonable estimates of the expected poly-Si lateral growth length as a function of the laser irradiation scenario. The model in its current form is a useful tool for first order calculations and for supporting relevant experimental studies.
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Hidayat Kisdarjono, Apostolos T. Voutsas, Rajendra Solanki, Ashwini Kumar, "Simulation of transient temperature profiles during ELA and relation to process parameters", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424886; https://doi.org/10.1117/12.424886
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