30 April 2001 Simulation of transient temperature profiles during ELA and relation to process parameters
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We have developed excimer-laser-annealing modeling capability by broadening the computational ability of a standard finite-element based computational-fluid-dynamics software package to adopt to the specific demands of very rapid heating of thin a-Si films. This was achieved by the incorporation of a subroutine employing a phase function and a set of rules for determining latent heat absorption or release. Wit this enhancement the model was able to correctly calculate the degree of superheating/undercooling in the film and track the melt-solid interface velocity. The model also provided reasonable estimates of the expected poly-Si lateral growth length as a function of the laser irradiation scenario. The model in its current form is a useful tool for first order calculations and for supporting relevant experimental studies.
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Hidayat Kisdarjono, Hidayat Kisdarjono, Apostolos T. Voutsas, Apostolos T. Voutsas, Rajendra Solanki, Rajendra Solanki, Ashwini Kumar, Ashwini Kumar, } "Simulation of transient temperature profiles during ELA and relation to process parameters", Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424886; https://doi.org/10.1117/12.424886

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