Operation Of Integrating Indium Antimonide Linear Arrays At 65 K And Below

Gary C. Bailey; Keith Matthews; Curtiss A. Niblack

doi:10.1117/12.936382

19 January 1984 Operation Of Integrating Indium Antimonide Linear Arrays At 65 K And Below

Gary C. Bailey, Keith Matthews, Curtiss A. Niblack

Proceedings Volume 0430, Infrared Technology IX; (1984) https://doi.org/10.1117/12.936382
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

The combination of a FET switch non-CCD readout architecture with high-quality mesa photovoltaic indium antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-pm region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (Ã‚Â±2%). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and >12 seconds at 65 K have been achieved. kTC read noise levels of less than 1200 electrons have been measured for both devices.

Citation Download Citation

Gary C. Bailey, Keith Matthews, and Curtiss A. Niblack "Operation Of Integrating Indium Antimonide Linear Arrays At 65 K And Below", Proc. SPIE 0430, Infrared Technology IX, (19 January 1984); https://doi.org/10.1117/12.936382

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