15 May 2001 TFT-based large-area sensor for large-format digital photography
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Abstract
Professional and consumer digital photography cameras use either CCD or CMOS sensors. Both of these sensors are fabricated using crystalline silicon technology. The advantage of this technology is that the pixel sizes can be made relatively small with resolutions approaching that of conventional photographic film. The disadvantage is that the active area is limited by the size of the silicon wafers, thereby making large format photography difficult. A new class of sensor using amorphous silicon on glass has bene developed for the medical field of radiography, fluoroscopy, and mammography. These pixilated devices have a thin-film- transistor (TFT) switch coupled to a photodiode or storage capacitor located at each pixel. Devices with 70 micrometers pixel pitch and nominally 10 inch by 12 inch active area are under development. Results are presented on a 14 inch by 17 inch TFT-based large area sensor with a pixel pitch of 139 micrometers and a prototype 512 by 512 pixel device with a 70 micrometers pitch. Characterizations include linearity, dynamic range, input-output transfer characteristics and resolution. Advantages and limitations of this technology for large format photography will be discussed.
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Brian G. Rodricks, Brian G. Rodricks, Michael G. Hoffberg, Michael G. Hoffberg, Denny L. Y. Lee, Denny L. Y. Lee, } "TFT-based large-area sensor for large-format digital photography", Proc. SPIE 4306, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications II, (15 May 2001); doi: 10.1117/12.426970; https://doi.org/10.1117/12.426970
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