Characterization of GaN layers by second harmonic generation and photoluminescence

Saulius Juodkazis; Augustinas Galeckas; Juozas V. Vaitkus; Shiro Sakai; Hiroaki Misawa

doi:10.1117/12.417588

8 March 2001 Characterization of GaN layers by second harmonic generation and photoluminescence

Saulius Juodkazis, Augustinas Galeckas, Juozas V. Vaitkus, Shiro Sakai, Hiroaki Misawa

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417588
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

We have observed an apparent rotational anisotropy of the second harmonic generation (SHG) at signal at (lambda) = 405 nm back-reflected from the surface (0001) of 3 micrometers -thick GaN grown by metalorganic chemical vapor deposition (MOCVD). The focusing depth of 2 micrometers was aimed to probe the 10-15 nm-thick buffer layer where both cubic and hexagonal phases of GaN are coexisting. Typical angular dependency clearly indicated the presence of both isotropic and six-fold contributions. The isotropic I^(2(omega ))(qq) component has a minor one-fold modulation due to a ca. 2 degree(s) disorientation of the top surface with respect to the hexagonal planes. We attribute the substantial isotropic component to the SHG yield from the bulk of GaN. The occurrence of six-fold I^(2(omega )) (qq) anisotropy, however, indicates a complementary nonlinearities, most likely due to hexagonal phase, which is coexisting with the hexagonal one in the buffer layer region. In general, both surface and bulk nonlinearities are contributing to the reflected SH yield. The symmetry of surface can differ from that in the bulk, exhibiting a corresponding angular dependence of harmonic generation. SHG mapping of GaN (ooo1) surface was measured from the ablated pattern. Space-Time-Spectra resolved photoluminescence (PL) was used to characterize the InGaN layers and GaN/InGaN MQW laser structures. Two-photon absorption (TPA) excited mapping of the dislocation network in GaN layers is demonstrated.

Citation Download Citation

Saulius Juodkazis, Augustinas Galeckas, Juozas V. Vaitkus, Shiro Sakai, and Hiroaki Misawa "Characterization of GaN layers by second harmonic generation and photoluminescence", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417588

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Gallium nitride

Harmonic generation

Luminescence

Second-harmonic generation

Anisotropy

Metalorganic chemical vapor deposition

Indium gallium nitride

Show All Keywords

Keywords/Phrases

Search In:

Publication Years