Er:YAG thin films and nanocrystals prepared by pulsed laser deposition

T. Jantson; Tea Avarmaa; H. Mandar; J. Eskusson; Ants Loehmus; Raivo Jaaniso

doi:10.1117/12.417617

8 March 2001 Er:YAG thin films and nanocrystals prepared by pulsed laser deposition

T. Jantson, Tea Avarmaa, H. Mandar, J. Eskusson, Ants Loehmus, Raivo Jaaniso

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417617
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

Thin films of erbium-doped YAG (Y₃Al₅O₁₂) were grown by pulsed laser deposition, followed by high temperature (>1100 degree(s)C) post-annealing. The deposition was carried out on MgO and MgAl₂O₄ substrates in ultra-high vacuum chamber with KrF excimer laser at fluences 2.5-3 J/cm². Influence of growth conditions (substrate temperature, gas environment, annealing temperature) on structural, topographical, and optical properties was investigated by using optical spectroscopy, X-ray diffraction, and atomic force microscopy.

Citation Download Citation

T. Jantson, Tea Avarmaa, H. Mandar, J. Eskusson, Ants Loehmus, and Raivo Jaaniso "Er:YAG thin films and nanocrystals prepared by pulsed laser deposition", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417617

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