Translator Disclaimer
8 March 2001 Er:YAG thin films and nanocrystals prepared by pulsed laser deposition
Author Affiliations +
Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417617
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
Thin films of erbium-doped YAG (Y3Al5O12) were grown by pulsed laser deposition, followed by high temperature (>1100 degree(s)C) post-annealing. The deposition was carried out on MgO and MgAl2O4 substrates in ultra-high vacuum chamber with KrF excimer laser at fluences 2.5-3 J/cm2. Influence of growth conditions (substrate temperature, gas environment, annealing temperature) on structural, topographical, and optical properties was investigated by using optical spectroscopy, X-ray diffraction, and atomic force microscopy.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Jantson, Tea Avarmaa, H. Mandar, J. Eskusson, Ants Loehmus, and Raivo Jaaniso "Er:YAG thin films and nanocrystals prepared by pulsed laser deposition", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417617
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top