8 March 2001 Nonlinear optical characterization of single-crystalline GaN by Z-scan technique
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Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417589
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
Nonlinear optical characteristics of single crystalline GaN were measured at the wavelength of 530 nm using Z-scan techniques. Two photon absorption coefficient at that wavelength was found to be 9 cm/GW, whereas the bound and free electron nonlinear refractive indexes were estimated as 2.5 X 10-14 cm2/W and 5 X 10-22 cm3, respectively. Moreover, single color dynamical Z-scan measurement was used for the determination of the photoexcited carrier trapping time, which was estimated as 1 ns.
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Vaidas Pacebutas, A. Stalnionis, Arunas Krotkus, M. Leszczynski, Piotr Perlin, T. Suski, "Nonlinear optical characterization of single-crystalline GaN by Z-scan technique", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417589; https://doi.org/10.1117/12.417589
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