8 March 2001 Photocurrent amplification in Schottky diodes
Author Affiliations +
Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417605
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
It is shown that the photocurrent amplification in Schottky diodes (SD) with low barriers is due to the avalanche of minority carriers in the depletion layer (DL) of a semiconductor. The simple physical model of carrier generation in the DL of the diode is proposed for the experimental results interpretation. The theoretical estimates of the current amplification coefficient are in a good agreement with experimental data.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larisa P. Amosova, Larisa P. Amosova, Vladimir L. Komolov, Vladimir L. Komolov, } "Photocurrent amplification in Schottky diodes", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417605; https://doi.org/10.1117/12.417605

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