8 March 2001 Photoluminescence of SiO2 and alpha-Si with silicon nanoinclusions
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Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417616
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
Photoluminescence (PL) spectra of the systems of Si nanocrystals imbedded into SiO2 and (alpha) -Si matrices were investigated. The first system was fabricated by the Si+ implantation into thermal SiO2 films on Si with subsequent annealing, and the other- by the irradiation of c-Si with heavy ions near the amorphization dose. For the first system, the influence of implantation does and additional phosphorus or boron implantation on the PL intensity was studied. The series of experiments aimed to clearing out the mechanisms of phosphorus induced PL enhancing was provided, namely: the influence of the order of P+ implantation and annealing, the effect of the pumping intensity on the degree of the PL enhancement. It was established that additional boron implantation makes PL weaker. The model of phosphorus and boron doping influence is suggested. For the second system, the effects of the Kr+ does and of the annealing temperature variation were revealed.
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Daria M. Gapanova, Oleg N. Gorshkov, Dmitry G. Revin, David I. Tetelbaum, Sergey A. Trushin, "Photoluminescence of SiO2 and alpha-Si with silicon nanoinclusions", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417616; https://doi.org/10.1117/12.417616
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