8 March 2001 Photomodulation dynamics of exciton reflectance in GaAs/AlAs single-quantum-well structures
Author Affiliations +
Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417596
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
The excitation-energy dependences and relaxation times of photoinduced changes of excitonic lines in type-I GaAs/AlAs QW structures are studied by the photo- and wavelength- modulated reflectance spectroscopies. The optical data indicate that photoinduced broadening/quenching of excitonic lines dominates in the modulation spectra under photoexcitation within the QW by He-Ne laser. It was found that characteristic time of these photoinduced changes varies form milliseconds at 300 K to seconds at 120 K and reduces under illumination above the AlAs band gap. Moreover, different time constants and their temperature dependences were obtained for QW- and buffer layer-related optical features. It was suggested that photoinduced changes of excitonic spectra could be associated with the T- X electron transfer effects and creation of excess holes in the QW under He-Ne excitation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Kavaliauskas, J. Kavaliauskas, B. Cechavicius, B. Cechavicius, G. Krivaite, G. Krivaite, A. Galickas, A. Galickas, V. I. Kadushkin, V. I. Kadushkin, E. L. Shangina, E. L. Shangina, Ju N. Gorbunova, Ju N. Gorbunova, "Photomodulation dynamics of exciton reflectance in GaAs/AlAs single-quantum-well structures", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417596; https://doi.org/10.1117/12.417596

Back to Top