8 March 2001 Shaping of the band gap in AlInGaN alloys
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Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417586
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States
Abstract
Strain Energy Band Engineering of Group III-N heterostructures should allow us to prevent defect formation at the heterointerfaces ad to reduce the built-in electric field in the quantum wells. The strain, caused by lattice mismatch, may be decreased by incorporation of In into AlGaN. To monitor structural perfection of the quaternary compound AlInGaN and to evaluate electronic potential profile, we employed optical methods: reflectivity, site- selectively excited photoluminescence, photoluminescence excitation and time-resolved luminescence. AlGaN with the molar fraction of Al of 9% and two samples with the lattice mismatch reduced by partial substitution of Al by 1% and 2% of In were investigated. In AlGaN, the luminescence excited resonantly with the exciton position is red shifted. The photoluminescence excitation spectra indicate that the mobility edge is above the optical band gap, and the localization vanishes. These results show that the incorporation of approximately equals 2% indium into AlGaN leads to the disappearance of the band tail states and smoothing of the potential profile.
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Gintautas Tamulaitis, Gintautas Tamulaitis, Saulius Jursenas, Saulius Jursenas, K. Kazlauskas, K. Kazlauskas, Arturas Zukauskas, Arturas Zukauskas, Mohamed Asif Khan, Mohamed Asif Khan, Jinwei Yang, Jinwei Yang, Grigory S. Simin, Grigory S. Simin, Remis Gaska, Remis Gaska, Michael S. Shur, Michael S. Shur, } "Shaping of the band gap in AlInGaN alloys", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417586; https://doi.org/10.1117/12.417586
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