Submicrometer lithography by near-field optical microscopy

Saulius Juodkazis; Yoshio Arisawa; Shigeki Matsuo; Hiroaki Misawa; Rolandas Tomasiunas; Juozas V. Vaitkus

doi:10.1117/12.417618

8 March 2001 Submicrometer lithography by near-field optical microscopy

Saulius Juodkazis, Yoshio Arisawa, Shigeki Matsuo, Hiroaki Misawa, Rolandas Tomasiunas, Juozas V. Vaitkus

Proceedings Volume 4318, Smart Optical Inorganic Structures and Devices; (2001) https://doi.org/10.1117/12.417618
Event: Advanced Optical Materials and Devices, 2000, Vilnius, United States

Abstract

Optimization of (i) intensity of illumination and (ii) thickness of resist was made looking for the conditions when high spatial resolution could be achieved by optical near- field lithography. Standard set-up of near-field illumination through a tapered Al-coated fiber tip was employed for the exposure of positive resist OFPR-5000 (EG), which is photo-sensitive for wavelength (lambda) < 450 nm. Tip was scanned along the line at near-field conditions of constant sample-to-tip separation to produce adjustable exposure dose of the spin-coated resist film. Femtosecond, 120 fs, pulses of the power P <1 mW (at 82 MHz repetition rate) at 400 nm were coupled into a fiber (<1 m length) and delivered to the surface of the resist for illumination. The issues of NSOM fabrication using tapered Al-coated tips are addressed. To achieve a reproducible and high aspect ratio (approaching 1:1) NSOM-based lithography there should be found resists allowing to produce thin films (<100 nm) with low surface roughness (>10 nm).

Citation Download Citation

Saulius Juodkazis, Yoshio Arisawa, Shigeki Matsuo, Hiroaki Misawa, Rolandas Tomasiunas, and Juozas V. Vaitkus "Submicrometer lithography by near-field optical microscopy", Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); https://doi.org/10.1117/12.417618

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