28 June 2001 Electronic noise analysis of a 127-μm pixel TFT/photodiode array
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Abstract
In this paper we examine origins of electronic noise in a 127-micron pixel thin film transistor (TFT)/photodiode image sensor array. The imaging array is a 1536 data line by 1920 gate line amorphous Silicon sensor array connected to low noise charge amplifiers and 14-bit electronics. We measure the contributions of A/D converters, charge amplifiers, data-line resistance and capacitance, and pixel switching to the overall electronic noise of 1040 e- per pixel. Noise power spectra are evaluated for each dark offset image.
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Richard L. Weisfield, Richard L. Weisfield, N. Robert Bennett, N. Robert Bennett, } "Electronic noise analysis of a 127-μm pixel TFT/photodiode array", Proc. SPIE 4320, Medical Imaging 2001: Physics of Medical Imaging, (28 June 2001); doi: 10.1117/12.430955; https://doi.org/10.1117/12.430955
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