11 July 2001 Influence of target temperature on crystallization and properties of NiTi thin film shape memory alloy
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A new process parameter viz.; target temperature, has been introduced to decrease the composition variables between the target and substrate. A DC magnetron sputtering system has been used for the deposition of NiTi film from equiatomic NiTi target on silicon substrate. The target transitions from a low temperature value to a high temperature value (>700 degree(s)C) during sputtering. The sputtered films were crystallized by heating to 500 degree(s)C for 10 minutes in situ prior to removal from the sputtering system. X-ray diffractogram shows that the film peaks correspond to martensite as well as austenite phases. The film developed under this process displays the two-way shape memory effect without post annealing. Electrical resistivity measurement reveals that there are three different phases present viz.; austenite, rhombohedral and martensite, which exists at different temperature ranges. The characteristic transformation temperatures determined by the electrical resistivity method are compared with those obtained with DSC thermograms.
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Kotekar Panduranga Mohanchandra, Kotekar Panduranga Mohanchandra, Ken K. Ho, Ken K. Ho, Gregory Paul Carman, Gregory Paul Carman, "Influence of target temperature on crystallization and properties of NiTi thin film shape memory alloy", Proc. SPIE 4333, Smart Structures and Materials 2001: Active Materials: Behavior and Mechanics, (11 July 2001); doi: 10.1117/12.432783; https://doi.org/10.1117/12.432783

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