16 August 2001 Laterally movable gate FET (LMGFET) for on-chip integration of MEMS with electronics
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Operation of a new device structure called Laterally Movable Gate Field Effect Transistor (LMGFET) is reported here. The device drain current changes linearly with lateral gate motion. A prototype test device was designed and fabricated in our laboratory. A novel three-mask LIGA compatible process was used for device fabrication. A comb drive structure was used to drive the movable gate. On the unoptimized test device, static sensitivity to gate position of 6.4 A/m was observed in saturation with zero gate to source voltage. For the ac drive voltage on the comb drive, a sensitivity of 3.2 nA change in drain current per volt of ac drive voltage were observed at a dc bias of 38 V. Significant improvement in device performance are possible with changes in device design. This, to our knowledge, is the first report on the operation of a LMGFET with a driven gate.
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Pratul K. Ajmera, In-Hyouk Song, "Laterally movable gate FET (LMGFET) for on-chip integration of MEMS with electronics", Proc. SPIE 4334, Smart Structures and Materials 2001: Smart Electronics and MEMS, (16 August 2001); doi: 10.1117/12.436609; https://doi.org/10.1117/12.436609

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