Paper
28 November 2000 Analytical calculation of dark voltage-current characteristics of double-layer heterojunction photodiode
Bogdan S. Sokolovsky, Volodymyr K. Pysarevsky
Author Affiliations +
Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407714
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
An analytical expression for dark voltage-current characteristics (VCC) of double layer heterojunction (DLHJ) photodiode. It is shown that spatial inhomogeneity of energy band gap in photodiode base region allows to substantially increase the reverse current connected with thermal generation of carriers both in the base region and at the contacts. In the case when wide gap layer is remote from the metallurgical edge of p-n junction at the distance comparable with the thickness of the space charge region (SCR) a portion of negative differential resistance (NDR) may appear on the reverse branch of VCC.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bogdan S. Sokolovsky and Volodymyr K. Pysarevsky "Analytical calculation of dark voltage-current characteristics of double-layer heterojunction photodiode", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407714
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KEYWORDS
Photodiodes

Voltage controlled current source

Diffusion

Diodes

Heterojunctions

Resistance

Electrons

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