28 November 2000 Dark current blocking in semiconductors with one-type conduction
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Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407729
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
The paper suggests a novel concept of dark conduction blocking in semiconductors with one type conduction comprising a series of (p++-p -p+ - p++) junction of the type. Blocking is caused by the existence of a potential barrier in the region of the P+ -p junction. The barrier is positioned in crystal at a depth of 10-15 micrometers from one of the contacts. As a consequence, the external electric shielded field is blocked by the space-charge region of the junction resulting in the absence of charge transport through the valence band when the structure is not illuminated. IR-photodetectors ((lambda) approximately 1-6,5 micrometers ) fabricated on p-type single crystal silicon are characterized by photoresposivity S(lambda approximately 10-0,1 A/W and dark current density <5.10-9 A/cm2 at T approximately 80 K.
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A. V. Dvurechenskii, A. V. Dvurechenskii, A. P. Kovchavtzev, A. P. Kovchavtzev, G. L. Kurychev, G. L. Kurychev, I. A. Ryazantsev, I. A. Ryazantsev, } "Dark current blocking in semiconductors with one-type conduction", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407729; https://doi.org/10.1117/12.407729
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