28 November 2000 High-temperature magnetothermoelectrical extruded material on the basis of Bi85Sb15 solid solution
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Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407756
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
High effective and sufficiently firm materials on the basis of the Bi(subscript 85)Sb(subscript 15) solid solution doped by Pb impurities have been obtained and investigated. It is shown, that with growth of a doping degree values of thermoelectrical figure of merit (Z) at first grown up to 0,005 at %Pb of and at this concentration reaches value equal approximately 5,0x10(superscript -3)K(superscript -1 at approximately 200K, and then decreases. In a magnetic field the greatest values of Z for the samples of p-type has one doped by 0,05 at of %Pb, and Z reaches value approximately 0,84x10(superscript -3) K(superscript -1) at approximately 80K.
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M. M. Tagiyev, "High-temperature magnetothermoelectrical extruded material on the basis of Bi85Sb15 solid solution", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407756; https://doi.org/10.1117/12.407756
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